D6S-RE87电阻浆 D6S-RE87 Resistors
1.产品介绍 Product Introduction
厚膜电阻浆料已开发用于制造具有埋置分立电阻组件的LTCC封装。本信息表侧重于该系列电阻浆料(10欧姆至10K欧姆/平方)中更高欧姆值的成员。
该材料设计用于与 D6S 生瓷膜共烧，用于制造高密度，高性能微电子封装。
The thick film resistor pastes has been developed for use in the manufacture of LTCC packages with buried discrete resistor components. This information sheet focuses on the higher ohmic value members of the resistor pastes (10 ohm to 10K ohm/square).
The materials are designed for co-firing with the D6S LTCC tape for the manufacture of high density, high performance, microelectronic packages.
2.产品性能 Product Performance
备注：
样品制备
A)所有样品端接在CN 33-398导体上，并以一层瓷带深度与8层D6S共烧。
B)以2mm x 1mm形状用于所有薄片电阻率和TCR测量。
C)所有浆料在室温下静置3-4分钟，然后在70℃下干燥5-10分钟，以8℃/min速度缓慢升温至峰值温度850并保温10分钟。烧结后的膜厚度应该是25-28微米。
测试条件
1电阻温度系数:冷TCR测量范围为+25℃至-55℃，热TCR测量范围为+25℃至+125℃。
2短期过载电压;产生>0.1%电阻值变化所需的最小电压。
3静电放电;2000 v (MIL-STD-883C，方法3015.2)。
Sample Preparation
A) All samples are terminated on CN 33-398 conductor, and are co-fired one tape layer deep in an 8 layer D6S
LTCC structure.
B) For all sheet resistivity and TCR measurements a 2mm x 1mm, 2 square geometry is used.
C) All pastes are leveled at room temperature for 3 to 4 minutes followed by drying at 70℃ for 5 to 10 minutes,and firing at a slow ramp rate of 8℃/minute with peak temperature of 850℃ for 10 minutes. Dried film thickness should be 25-28 microns.
Test Conditions
1TCR Temperature Coefficient of Resistance:Cold TCR measured from +25℃ to -55℃, hot TCR measured from+25℃ to +125℃.
2STOL Short Term Overload Voltage: Minimum voltage required to produce >0.1% change in resistor value.
3ESD Electrostatic Discharge:2,000V (MIL-STD-883C, Method 3015.2).
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