D6S-RE87電阻漿 D6S-RE87 Resistors
1.產品介紹 Product Introduction
厚膜電阻漿料已開發用於製造具有埋置分立電阻組件的LTCC封裝。本信息表側重於該系列電阻漿料(10歐姆至10K歐姆/平方)中更高歐姆值的成員。
該材料設計用於與 D6S 生瓷膜共燒，用於製造高密度，高性能微電子封裝。
The thick film resistor pastes has been developed for use in the manufacture of LTCC packages with buried discrete resistor components. This information sheet focuses on the higher ohmic value members of the resistor pastes (10 ohm to 10K ohm/square).
The materials are designed for co-firing with the D6S LTCC tape for the manufacture of high density, high performance, microelectronic packages.
2.產品性能 Product Performance
備注：
樣品製備
A)所有樣品端接在CN 33-398導體上，並以一層瓷帶深度與8層D6S共燒。
B)以2mm x 1mm形狀用於所有薄片電阻率和TCR測量。
C)所有漿料在室溫下靜置3-4分鍾，然後在70℃下幹燥5-10分鍾，以8℃/min速度緩慢升溫至峰值溫度850並保溫10分鍾。燒結後的膜厚度應該是25-28微米。
測試條件
1電阻溫度系數:冷TCR測量範圍為+25℃至-55℃，熱TCR測量範圍為+25℃至+125℃。
2短期過載電壓;產生>0.1%電阻值變化所需的最小電壓。
3靜電放電;2000 v (MIL-STD-883C，方法3015.2)。
Sample Preparation
A) All samples are terminated on CN 33-398 conductor, and are co-fired one tape layer deep in an 8 layer D6S
LTCC structure.
B) For all sheet resistivity and TCR measurements a 2mm x 1mm, 2 square geometry is used.
C) All pastes are leveled at room temperature for 3 to 4 minutes followed by drying at 70℃ for 5 to 10 minutes,and firing at a slow ramp rate of 8℃/minute with peak temperature of 850℃ for 10 minutes. Dried film thickness should be 25-28 microns.
Test Conditions
1TCR Temperature Coefficient of Resistance:Cold TCR measured from +25℃ to -55℃, hot TCR measured from+25℃ to +125℃.
2STOL Short Term Overload Voltage: Minimum voltage required to produce >0.1% change in resistor value.
3ESD Electrostatic Discharge:2,000V (MIL-STD-883C, Method 3015.2).
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